
1998
Document No. D16194EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SA1376, 1376A
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH VOLTAGE AMPLIFIERS
DATA SHEET
2002
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FEATURES
High voltage
VCEO:
180 V / 200 V
(2SA1376/2SA1376A)
Excellent hFE linearity
High total power dissipation in small dimension:
PT: 0.75 W
Complementary transistor with 2SC3478 and 2SC3478A
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
2SA1376/2SA1376A
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
200
V
Collector to emitter voltage
VCEO
180/200
V
Emitter to base voltage
VEBO
5
V
Collector current (DC)
IC(DC)
100
mA
Collector current (pulse)
IC(pulse)*
200
mA
Total power dissipation
PT
0.75
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
2SA1376/2SA1376A
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
200 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB =
5 V, IC = 0
100
nA
DC current gain
hFE1 **
VCE =
10 V, IC = 10 mA
135
300/200
600/400
DC current gain
hFE2 **
VCE =
10 V, IC = 100 mA
81
DC base voltage
VBE **
VCE =
10 V, IC = 10 mA
600
650
700
mV
Collector saturation voltage
VCE(sat) **
IC =
50 mA, IB = 5 mA
0.2
0.3
V
Base saturation voltage
VBE(sat) **
IC =
50 mA, IB = 5 mA
0.8
1.2
V
Output capacitance
Cob
VCB =
30 V, IE = 0, f = 1.0 MHz
3.5
4.0
pF
Gain bandwidth product
fT
VCE =
10 V, IE = 10 mA
80
120
MHz
Turn-on time
ton
0.16
s
Turn-off time
toff
IC =
10 mA, IB1 = IB2 = 1 mA,
VCC = –10 V
1.5
s
** Pulse test PW
≤ 350
s, duty cycle ≤ 2% per pulsed