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參數(shù)資料
| 型號： | 2SA1327A-O |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-10R1A, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 134K |
| 代理商： | 2SA1327A-O |
2SA1327A
2006-11-09
3
Collector-emitter voltage VCE (V)
IC – VCE
Colle
ct
or
curr
ent
I C
(A
)
Base-emitter voltage VBE (V)
IC – VBE
Colle
ct
or
curr
ent
I C
(A
)
Collector current IC (A)
hFE – IC
DC
curre
nt
gain
h
FE
Collector current IC (A)
VCE (sat) – IC
Colle
ctor-emi
tter
sa
tura
tion
vol
tage
V
CE
(sat)
(V)
Collector-emitter voltage VCE (V)
Safe Operating Area
Colle
ct
or
curr
ent
I C
(A
)
Ambient temperature Ta (°C)
PC – Ta
Colle
ctor
p
ower
d
issip
atio
n
P
C
(
W
)
10
0
Common emitter
Tc = 25°C
20
2
4
6
8
10
12
2
4
6
8
40
60
80
IB = 10 mA
10
0
Common emitter
VCE = 2 V
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
25
Tc = 100°C
1000
10
0.1
30
50
100
300
500
0.3
1
3
10
30
Common emitter
VCE = 2 V
Tc = 100°C
25
0.1
0.3
1
3
10
30
1
0.01
0.03
0.05
0.1
0.3
0.5
Tc = 100°C
25
Common emitter
IC/IB = 20
0
20
40
60
80
100
120
140
160
5
10
15
20
25
30
35
(1) Tc = Ta Infinite heat sink
(2) Ta = 25°C
(1)
(2)
0.3
1
3
10
50
0.1
0.3
1
3
10
30
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (pulsed)*
IC max (continuous)
100 ms*
10 ms*
500 ms*
DC operation
Tc = 25°C
VCEO
max
30
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| 2SA1327O | 10 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 2SA1327Y | 10 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 2SA1337B | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1337 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1327A-O(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1327A-Y(F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1329 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1330 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1330-L-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
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