![](http://datasheet.mmic.net.cn/30000/2SC3332-T_datasheet_1776647/2SC3332-T_1.png)
83002TN (KT)/71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
Ordering number:ENN1334D
2SA1319/2SC3332
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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( ) : 2SA1319
Specifications
Absolute Maximum Ratings at Ta = 25C
Electrical Characteristics at Ta = 25C
Package Dimensions
unit:mm
2003B
[2SA1319/2SC3332]
Features
Hgih breakdown voltage.
Excellent hFE linearity.
Wide ASO and highly resistant to breakdown.
Adoption of MBIT process.
Switching Test Circuit
* : The 2SA1319/2SC3332 are classified by 100mA hFE as follows :
Continued on next page.
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1.3
12
3
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
PW=20
s
D.C.
≤1%
INPUT
100V
50
RB
333
IB1
IB2
100
F
470
F
--5V
20IB1=--20IB2=IC=300mA
VR
+
RL
(For PNP, the polarity is reversed.)
OUTPUT