參數(shù)資料
型號(hào): 2SA1310T
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, NS-B1, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 237K
代理商: 2SA1310T
2SA1310
2
SJC00017BED
VCE(sat) IC
hFE IC
fT IE
PC Ta
IC VCE
IC VBE
Cob VCB
NV
I
C
0
160
40
120
80
0
500
400
300
200
100
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
0
12
10
8
2
6
4
0
100
80
60
40
20
Ta
= 25°C
180 A
160 A
140 A
120 A
100 A
20 A
40 A
60 A
80 A
IB
= 200 A
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
0
2.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
VCE
= 5 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 75°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
0.1
1
10
100
0
600
500
400
300
200
100
VCE
= 5 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
0.1
1
10
100
0
320
240
80
160
VCB
= 5 V
Ta
= 25°C
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
1
10
100
0
10
8
6
4
2
IE
= 0
f
= 1 MHz
Ta
= 25°C
Collector-base voltage V
CB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
0.01
0.1
1
0
120
100
80
60
40
20
VCE
= 10 V
GV
= 80 dB
Function
= FLAT
5 k
Rg
= 100 k
22 k
Noise
voltage
NV
(mV
)
Collector current I
C (mA)
This product complies with the RoHS Directive (EU 2002/95/EC).
相關(guān)PDF資料
PDF描述
2SA1312BLTE85R 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1312BLTE85L 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1312TE85R 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1313YTE85L 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1314-A 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1312-BL(TE85L,F 制造商:Toshiba 功能描述:PNP
2SA1312-BL(TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:PNP 120V TRANSISTOR. - Tape and Reel
2SA1312-GR(TE85L,F 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape
2SA1312GRTE85LF 功能描述:兩極晶體管 - BJT PNP Audio Amp VCEO -120V HFE 700 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1313-O(TE85L,F) 功能描述:TRANS PNP 50V 500MA TO236-3 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶(CT) 零件狀態(tài):Digi-Key 停止供應(yīng) 晶體管類型:PNP 電流 - 集電極(Ic)(最大值):500mA 電壓 - 集射極擊穿(最大值):50V 不同?Ib,Ic 時(shí)的?Vce 飽和值(最大值):250mV @ 10mA,100mA 電流 - 集電極截止(最大值):100nA(ICBO) 不同?Ic,Vce?時(shí)的 DC 電流增益(hFE)(最小值):70 @ 100mA,1V 功率 - 最大值:200mW 頻率 - 躍遷:200MHz 工作溫度:150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商器件封裝:S-Mini 標(biāo)準(zhǔn)包裝:1