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參數(shù)資料
| 型號(hào)： | 2SA1303P |
| 廠(chǎng)商： | SANKEN ELECTRIC CO LTD |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 14 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | MT100, TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 28K |
| 代理商： | 2SA1303P |
hFE Rank O(50to100), P(70to140), Y(90to180)
17
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284)
Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
–150
–5
–14
–3
125(Tc=25°C)
150
–55 to +150
Unit
V
A
W
°C
sAbsolute maximum ratings
sElectrical Characteristics
sTypical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Ratings
–100max
–150min
50min
–2.0max
50typ
400typ
Unit
A
V
MHz
pF
Conditions
VCB=–150V
VEB=–5V
IC=–25mA
VCE=–4V, IC=–5A
IC=–5A, IB=–0.5A
VCE=–12V, IE=2A
VCB=–10V, f=1MHz
VCC
(V)
–60
RL
(
)
12
IC
(A)
–5
VBB2
(V)
5
IB2
(mA)
500
ton
(
s)
0.25typ
tstg
(
s)
0.85typ
tf
(
s)
0.2typ
IB1
(mA)
–500
LAPT
2SA1303
(Ta=25°C)
I C– V CE Characteristics (Typical)
h FE– I C Characteristics (Typical)
Safe Operating Area (Single Pulse)
h FE– I C Temperature Characteristics (Typical)
V CE(sat) – I B Characteristics (Typical)
Pc – T a Derating
0
–4
–8
–12
–1
–2
–3
–4
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
–50mA
–100mA
I B=–20mA
–600mA
–700mA
–500mA
–400mA –300mA
–200mA
–150mA
0
–3
–2
–1
0
–0.2
–0.4
–1.0
–0.6
–0.8
Base Current I B(A)
Collector-Emitter
Saturation
Voltage
V
CE(sat)
(V)
I C=–10A
–5A
–0.02
–0.1
–1
–0.5
–10
–5
–14
20
50
100
200
Collector Current I C(A)
DC
Current
Gain
h
FE
(V CE=–4V)
Typ
–3
–10
–100
–200
–0.2
–1
–0.5
–10
–40
–5
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
Without Heatsink
Natural Cooling
DC
10ms
1ms
100ms
0.02
0.1
1
1 0
0
20
40
60
80
Cut-off
Frequency
f
T
(MH
Z
)
(V CE=–12V)
Emitter Current I E(A)
Typ
0.1
1
3
0.5
1
1 0
100
1000
2000
Time t(ms)
Transient
Thermal
Resistance
θ
j-a
(C/W)
θj-a–t Characteristics
f T– I E Characteristics (Typical)
(V CE=–4V)
–0.02
–0.1
–0.5
–1
–5
–10 –14
30
50
100
200
Collector Current I C(A)
DC
Current
Gain
h
FE
125C
25C
–30C
130
100
50
3.5
0
2 5
5 0
7 5
100
125
150
Ambient Temperature Ta(C)
Maximum
Power
Dissipation
P
C
(W)
With
Infinite
heatsink
Without Heatsink
I C– V BE Temperature Characteristics (Typical)
0
–14
–10
–5
0– 2
–1
Base-Emittor Voltage V BE(V)
Collector
Current
I
C
(A)
(V CE=–4V)
125C
(Case
Temp)
25C
(Case
Temp)
–30C
(Case
Temp)
VBB1
(V)
–10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Part No.
b. Lot No.
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PDF描述 |
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| 2SA1306B | 1.5 A, 200 V, PNP, Si, POWER TRANSISTOR |
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|---|---|
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