參數(shù)資料
型號(hào): 2SA1225
元件分類: 小信號(hào)晶體管
英文描述: 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, 2-7J1A, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 144K
代理商: 2SA1225
2SA1225
2010-02-05
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 160 V, IE = 0
1.0
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
1.0
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
160
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 1 mA, IC = 0
5
V
DC current gain
hFE
(Note 1)
VCE = 5 V, IC = 100 mA
70
240
Collector emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 50 mA
1.5
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 500 mA
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 100 mA
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
30
pF
Note1: hFE classification O: 70 to 140, Y: 120 to 240
Marking
A1225
Lot No.
Note 2
Characteristics
indicator
Part No. (or abbreviation code)
Note 2:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
相關(guān)PDF資料
PDF描述
2SA1226-LE2 30 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1226-T2B 30 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1226-T1BE2 30 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1226-LE3 30 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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