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參數(shù)資料
| 型號： | 2SA1193KTZ-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, SC-51, TO-92 MOD, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SA1193KTZ-E |
2SA1193(K)
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
Maximum Collector Dissipation Curve
0.9
0.6
0.3
050
150
100
Ambient Temperature Ta (°C)
Collector
power
dissipation
P
C
(W)
Area of Safe Operation
–3
–1.0
–0.3
–0.1
–0.03
–0.01
–0.003
–3
–30
–300
–10
–100
Collector to Emiter Voltage VCE (V)
Collector
current
I
C
(A)
iC (peak)
IC max
Ta = 25
°C
PW
=
1
ms
1
shot
PW
=
100
ms
1
shot
PW
=
10
ms
1
s
hot
Typical Output Characteristics
–500
–400
–300
–200
–100
0
–2
–6
–10
–4
–8
Collector to Emitter Voltage VCE (V)
Collector
current
I
C
(mA)
IB = 0
–5
A
–10
–20
P
C =
0.9W
–40
–60
–80
–100
DC Current Transfer Ratio vs.
Collector Current
100,000
30,000
10,000
3,000
1,000
300
100
–10
–30
–100
–1,000
–300
Collector Current IC (mA)
VCE = –3 V
Pulse
Ta = 75
°C
25
°C
DC
Current
transfer
ratio
h
FE
Saturation Voltage vs.
Collector Current
–10
–3
IC = 500 IB
Pulse
Ta = 25
°C
75
°C
–1.0
–0.3
–0.1
–10
–30
–300
–100
–1,000
Collector Current IC (mA)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V)
VBE(sat)
VCE(sat)
Switching Time vs. Collector Current
10
3
1.0
toff
tstg
ton
td
0.3
0.1
0.03
0.01
–10
–30
Collector Curret IC (mA)
Switching
time
t
(
s)
–100
–1,000
–300
IC = 500 IB
Ta = 25
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1194 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-126 -60V -1A 8W ECB |
| 2SA1194(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 1A I(C) | TO-126 |
| 2SA1194K | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-126 -60V -1A 1W ECB |
| 2SA1195 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SA1197 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR-60V -1A 8W SURFACE MOUNT |
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