參數(shù)資料
型號: 2SA1190DTZ-E
元件分類: 小信號晶體管
英文描述: 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: SC-43A, 3 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 93K
代理商: 2SA1190DTZ-E
2SA1190
Rev.2.00 Aug 10, 2005 page 2 of 6
Electrical Characteristics
(Ta = 25°C)
2SA1190
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
–90
V
IC = –10
A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
–90
V
IC = –1 mA, RBE =
Emitter to base breakdown voltage
V(BR)EBO
–5
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
–0.1
A
VCB = –70 V, IE = 0
Emitter cutoff current
IEBO
–0.1
A
VEB = –2 V, IC = 0
DC current trnsfer ratio
hFE*
1
250
800
VCE = –12 V,
IC = –2 mA*
2
Collector to emitter saturation voltage
VCE(sat)
–0.05
–0.15
V
IC = –10 mA,
IB = –1 mA*
2
Base to emitter saturation voltage
VBE(sat)
–0.7
–1.0
V
Gain bandwidth product
fT
130
MHz
VCE = –6 V,
IC = –10 mA
Collector output capacitance
Cob
3.2
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Noise figure
NF
0.15
1.5
dB
VCE = –6 V,
IC = –0.1 mA,
Rg = 10 k
f = 1 kHz
0.2
2.0
dB
VCE = –6 V,
IC = –0.1 mA,
Rg = 10 k
f = 10 Hz
Noise voltage referred to input
en
0.7
nV/
√Hz
VCB = –6 V,
IC = –10 mA,
Rg = 0, f = 1 kHz
Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows.
2. Pulse test
D
E
250 to 500
400 to 800
相關(guān)PDF資料
PDF描述
2SA1191-E SMALL SIGNAL TRANSISTOR, TO-92
2SA1190-D SMALL SIGNAL TRANSISTOR, TO-92
2SA1190-D SMALL SIGNAL TRANSISTOR, TO-92
2SA1191-D SMALL SIGNAL TRANSISTOR, TO-92
2SA1193(K)TZ 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1190E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 100MA I(C) | TO-92
2SA1190ETZ-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA1191 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial
2SA1191D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92
2SA1191E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92