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參數(shù)資料
| 型號： | 2SA1171PE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MPAK-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2SA1171PE |
2SA1171
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–90
V
Collector to emitter voltage
V
CEO
–90
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–90
—
V
I
C = –1 mA, RBE = ∞
Collector cutoff current
I
CBO
—
–0.5
AV
CB = –75 V, IE = 0
DC current transfer ratio
h
FE*
1
250
—
800
V
CE = –12 V, IC = –2 mA
Base to emitter voltage
V
BE
—
–0.75
V
CE = –12 V, IC = –2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.5
V
I
C = –10 mA, IB = –1 mA
Gain bandwidth product
f
T
—
200
—
MHz
V
CE = –12 V, IC = –2 mA
Collector output capacitance
Cob
—
1.6
—
pF
V
CB = –25 V, IE = 0, f = 1 MHz
Note:
1. The 2SA1171 is grouped by h
FE as follows.
Grade
D
E
Mark
PD
PE
h
FE
250 to 500
400 to 800
See characteristic curves of 2SA872.
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PDF描述 |
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| 2SA1175H | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1182-Y | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1182-GR | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1182-O | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1182 | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1173 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:New Jersey Semi-Conductor Products, |
| 2SA1174 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR SST-60V -.05A .3W |
| 2SA1174-E(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1175 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1175-H(A) | 制造商:Renesas Electronics Corporation 功能描述: |
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