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參數(shù)資料
| 型號： | 2SA1129 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 220K |
| 代理商： | 2SA1129 |
Data Sheet D14856EJ2V0DS
2
2SA1129
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
30 V, IE = 0 A
10
A
Emitter cutoff current
IEBO
VEB =
5.0 V, IC = 0 A
10
A
DC current gain
hFE1
VCE =
1.0 V, IC = 3.0 ANote
40
200
DC current gain
hFE2
VCE =
1.0 V, IC = 5.0 ANote
20
Collector saturation voltage
VCE(sat)1
IC =
3.0 A, IB = 0.1 ANote
0.3
V
Collector saturation voltage
VCE(sat)2
IC =
5.0 A, IB = 0.5 ANote
0.6
V
Base saturation voltage
VBE(sat)1
IC =
3.0 A, IB = 0.1 ANote
1.5
V
Base saturation voltage
VBE(sat)2
IC =
5.0 A, IB = 0.5 ANote
2.0
V
Turn-on time
ton
1.0
s
Storage time
tstg
2.5
s
Fall time
tf
IC =
5.0 A, RL = 4.0 ,
IB1 =
IB2 = 0.5 A, VCC 20 V
PW = 50
s, duty cycle = 2%
1.0
s
Note Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE1
40 to 80
60 to 120
100 to 200
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1129-L | 7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SA1145-YTPE6 | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1156-L | 1000 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1156-K | 1000 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1156-N | 1000 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1129-AZ-L | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SA1129K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 7A I(C) | TO-220AB |
| 2SA1129L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 7A I(C) | TO-220AB |
| 2SA1129-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1129M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 7A I(C) | TO-220AB |
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