- 您現在的位置：買賣IC網 > PDF目錄370045 > 2SA1081 (Hitachi,Ltd.) Silicon PNP Epitaxial PDF資料下載
參數資料
| 型號： | 2SA1081 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2SA1081 |
2SA1025, 2SA1081, 2SA1082
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SA1025
2SA1081
2SA1082
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
–60
–90
–120
V
Collector to emitter voltage
–60
–90
–120
V
Emitter to base voltage
–5
–5
–5
V
Collector current
–100
–100
–100
mA
Emitter current
100
100
100
mA
Collector power dissipation
400
400
400
mW
Junction temperature
150
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SA1025
2SA1081
2SA1082
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–60
—
—
–90
—
—
–120 —
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–60
—
—
–90
—
—
–120 —
—
V
I
C
= –1 mA,
R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
—
–5
—
—
–5
—
—
μ
A
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
—
—
–0.1
—
—
–0.1
—
—
–0.1
μ
A
V
CB
= –50 V, I
E
= 0
Emitter cutoff current
I
EBO
—
—
–0.1
—
—
–0.1
—
—
–0.1
V
EB
= –2 V, I
C
= 0
DC current transfer ratio h
FE
*
1
250
—
800
250
—
800
250
—
800
V
CE
= –12 V,
I
C
= –2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
—
–0.2
—
—
–0.2
—
—
–0.2
V
I
C
= –10 mA,
I
B
= –1 mA
Base to emitter voltage
V
BE
—
–0.6
—
—
–0.6 —
—
–0.6 —
V
V
CE
= –12 V,
I
C
= –2 mA
Gain bandwidth product f
T
—
90
—
—
90
—
—
90
—
MHz V
CE
= –12 V,
I
C
= –2 mA
Collector output
capacitance
Cob
—
3.5
—
—
3.5
—
—
3.5
—
pF
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
Note:
D
1. The 2SA1025, 2SA1081 and 2SA1082 are grouped by h
FE
as follows.
E
250 to 500
400 to 800
See characteristic curves of 2SA1083.
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA1082 | Silicon PNP Epitaxial |
| 2SA1031 | Silicon PNP Epitaxial |
| 2SA1032 | Silicon PNP Epitaxial |
| 2SA1037K | EPITAXIAL PLANAR SUPER / ULTRA MINI MOLD PNP SILICON TRANSISTORS |
| 2SA1576 | EPITAXIAL PLANAR SUPER / ULTRA MINI MOLD PNP SILICON TRANSISTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1081D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1081E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1082 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Plastic Encapsulated Transistor |
| 2SA1082D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1082E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
發(fā)布緊急采購，3分鐘左右您將得到回復。