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參數(shù)資料
| 型號(hào)： | 2SA1031 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 31K |
| 代理商： | 2SA1031 |
2SA1031, 2SA1032
3
Electrical Characteristics
(Ta = 25°C)
2SA1031
2SA1032
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–30
—
—
–55
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–30
—
—
–50
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
—
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
—
—
–0.5
—
—
–0.5
μ
A
μ
A
V
CB
= –18 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA
V
CE
= –12 V,
I
C
= –2 mA
I
C
= –10 mA,
I
B
= –1 mA
V
CE
= –12 V,
I
C
= –2 mA
V
= –10 V, I
E
= 0,
f = 1 MHz
Emitter cutoff current
—
—
–0.5
—
—
–0.5
DC current trnsfer ratio
100
—
500
100
—
320
Base to emitter voltage
V
BE
—
—
–0.8
—
—
–0.8
V
Collector to emitter
saturation voltage
V
CE(sat)
—
—
–0.2
—
—
–0.2
V
Gain bandwidth product f
T
200
280
—
200
280
—
MHz
Collector output
capacitance
Cob
—
3.3
4.0
—
3.3
4.0
pF
Noise figure
NF
—
—
5
—
—
5
dB
V
CE
= –6 V,
I
C
= –0.1 mA,
R
= 500
,
f = 120 Hz
Note:
1. The 2SA1031 and 2SA1032 are grouped by h
FE
as follows.
B
C
D
2SA1031
100 to 200
160 to 320
250 to 500
2SA1032
100 to 200
160 to 320
—
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1031B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1031C | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1031D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1032 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92 -55V -.1A .2W ECB |
| 2SA1032B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 |
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