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參數(shù)資料
| 型號(hào)： | 2SA1029CTZ |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43A, TO-92(1), 3 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 181K |
| 代理商： | 2SA1029CTZ |
2SA1029, 2SA1030
Rev.3.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
2SA1029
2SA1030
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–30
—
–55
—
V
IC = –10 A, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–30
—
–50
—
V
IC = –1 mA, RBE =
∞
Emitter to base
breakdown voltage
V(BR)EBO
–5
—
–5
—
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
—
–0.5
—
–0.5
A
VCB = –18 V, IE = 0
Emitter cutoff current
IEBO
—
–0.5
—
–0.5
A
VEB = –2 V, IC = 0
DC current trnsfer ratio
hFE*
1
100
—
500
100
—
320
VCE = –12 V,
IC = –2 mA
Base to emitter voltage
VBE
—
–0.8
—
–0.8
V
VCE = –12 V,
IC = –2 mA
Collector to emitter
saturation voltage
VCE(sat)
—
–0.2
—
–0.2
V
IC = –10 mA,
IB = –1 mA
Gain bandwidth product
fT
200
280
—
200
280
—
MHz
VCB = –12 V,
IC = –2 mA
Collector output
capacitance
Cob
—
3.3
4.0
—
3.3
4.0
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SA1029 and 2SA1030 are grouped by hFE as follows.
B
C
D
2SA1029
100 to 200
160 to 320
250 to 500
2SA1030
100 to 200
160 to 320
—
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1029D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1029DTZ | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA103 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Ge PNP Drift |
| 2SA1030 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. TO-92-55V -.1A .2W ECB |
| 2SA1030B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 |
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