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參數(shù)資料
| 型號(hào)： | 2SA1020RLRA |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS |
| 中文描述： | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-10, TO-226, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | 2SA1020RLRA |
2SA1020
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
50
Vdc
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0)
I
CBO
1.0
Adc
Emitter Cutoff Current
(V
EB
= 5.0 V, I
C
= 0)
I
EBO
1.0
Adc
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 500 mA, V
CE
= 2.0 V)
(I
C
= 1.5 A, V
CE
= 2.0 V)
h
FE
70
40
240
CollectorEmitter Saturation Voltage
(I
C
= 1.0 A, I
B
= 50 mA)
V
CE(sat)
0.5
Vdc
BaseEmitter Saturation Voltage (I
C
= 1.0 A, I
B
= 50 mA)
V
BE(sat)
1.2
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Note 3)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc, f = 100 MHz)
f
T
100
MHz
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle = 2.0%.
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle = 2.0%.
3. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
ORDERING INFORMATION
Device
Package
Shipping
2SA1020
TO92
5000 Units / Box
2SA1020G
TO92
(PbFree)
2SA1020RLRA
TO92
2000 / Tape & Reel
2SA1020RLRAG
TO92
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1020RLRAG | One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS |
| 2SA1020 | One Watt High Current PNP Transistor(1W高電流PNP晶體管) |
| 2SA1022 | Silicon PNP epitaxial planer type |
| 2SA1034 | Silicon PNP epitaxial planer type |
| 2SC2406 | Silicon PNP epitaxial planer type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1020RLRAG | 功能描述:兩極晶體管 - BJT 1W High Current PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1020-X-AB3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020-X-AE3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020-X-T9N-B | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020-X-T9N-K | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
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