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參數(shù)資料
| 型號： | 2SA1020-O-T9N-K |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SILICON PNP EPITAXIAL TRANSISTOR |
| 中文描述： | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92NL, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 207K |
| 代理商： | 2SA1020-O-T9N-K |
2SA1020
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R211-007,B
T Y PICAL CHARACT ERIS T ICS (Cont.)
TO-92NL
SOT-89
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1020-O-T9N-R | SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020-X-AB3-R | SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020-X-T9N-B | SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020-X-T9N-K | SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020-Y-AB3-B | SILICON PNP EPITAXIAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1020-O-T9N-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020PT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:2SA1020PT |
| 2SA1020RLRA | 功能描述:兩極晶體管 - BJT 1W High Current PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1020RLRAG | 功能描述:兩極晶體管 - BJT 1W High Current PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1020-X-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
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