參數(shù)資料
型號: 2SA1013
廠商: MICRO COMMERCIAL COMPONENTS
元件分類: 小信號晶體管
英文描述: 1000 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, TO-92MOD, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 77K
代理商: 2SA1013
2SA1013-O
PNP
Epitaxial Silicon
Transistor
Features
Capable of 0.9Watts of Power Dissipation.
Collector-current -1.0A
Collector-base Voltage -160V
Operating and storage junction temperature range: -55
to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
-160
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
-160
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-10mAdc, IC=0)
-6.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-150Vdc, IE=0)
---
-1.0
uAdc
ICEO
Collector Cutoff Current
(VCB=-120Vdc, IE=0)
---
-10
uAdc
IEBO
Emitter Cutoff Current
(VEB=-6.0Vdc, IC=0)
---
-1.0
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=-200mAdc, VCE=-5.0Vdc)
65
310
---
hFE(2)
DC Current Gain
(IC=-50mAdc, VCE=-5.0Vdc)
40
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
---
-1.5
Vdc
VBE
Base-Emitter Saturation Voltage
(IC=-5.0mAdc, VCE=-5.0Vdc)
---
-0.75
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=-200mAdc, VCE=-5.0Vdc,
f=30MHz)
-15
---
MHz
CLASSIFICATION OF HFE(1)
Rank
R
O
Y
Range
60-120
120-200
200-300
TO-92MOD
A
B
C
D
E
F
G
H
I
J
K
M
N
L
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
---
.030
---
.750
B
---
.039
---
1.00
C
---
.031
---
.80
D
---
.024
---
0.60
E
---
.201
---
5.10
F
.050
1.27
G
.050
1.27
H
.100
2.54
I
.039
1.00
J
---
.087
---
2.20
K
---
.024
---
.60
L
---
.323
---
8.20
M
---
.413
---
10.50
N
---
.161
---
4.10
123
1. EMITTER
2. COLLECTOR
3. BASE
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: 3
2007/03/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
2SA1013-Y
2SA1013
2SA1013-R
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