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參數(shù)資料
| 型號(hào)： | 2SA1010-M-AZ |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 118K |
| 代理商： | 2SA1010-M-AZ |
Data Sheet D16118EJ2V0DS
2
2SA1010
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC =
5.0 A, IB1 = 0.5 A, L = 1 mH
100
V
Collector to emitter voltage
VCEX(SUS)1
IC =
5.0 A, IB1 = IB2 = 0.5 A,
VBE(OFF) = 5.0 V, L = 180
H, clamped
100
V
Collector to emitter voltage
VCEX(SUS)2
IC =
10 A, IB1 = 1.0 A, IB2 = 0.5 A,
VBE(OFF) = 5.0 V, L = 180
H, clamped
100
V
Collector cutoff current
ICBO
VCB =
100 V, IE = 0
10
A
Collector cutoff current
ICER
VCE =
100 V, RBE = 51 , Ta = 125 °C
1.0
mA
Collector cutoff current
ICEX1
VCE =
100 V, VBE(OFF) = 1.5 V
10
A
Collector cutoff current
ICEX2
VCE =
100 V, VBE(OFF) = 1.5 V,
Ta = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB =
5.0 V, IC = 0
10
A
DC current gain
hFE1
VCE =
5.0 V, IC = 0.5 A*
40
200
DC current gain
hFE2
VCE =
5.0 V, IC = 3.0 A*
40
200
DC current gain
hFE3
VCE =
5.0 V, IC = 5.0 A*
20
Collector saturation voltage
VCE(sat)
IC =
5.0 A, IB = 0.5 A*
0.6
V
Base saturation voltage
VBE(sat)
IC =
5.0 A, IB = 0.5 A*
1.5
V
Turn-on time
ton
0.5
s
Storage time
tstg
1.5
s
Fall time
tf
IC =
5.0 A, RL = 10 ,
IB1 =
IB2 = 0.5 A, VCC 50 V
Refer to the test circuit.
0.5
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
40 to 80
60 to 120
100 to 200
TYPICAL CHARACTERISTICS (Ta = 25
°°°°C)
T
o
ta
lP
o
w
e
r
Di
s
ipa
ti
on
P
T
(W)
Ambient Temperature Ta (
°C)
Collector to Emitter Voltage VCE (V)
Col
le
c
tor
Current
IC
(
A
)
2 mm aluminum board,
no insulating board,
grease coating, natural
air cooling
With infinite heatsink
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| 2SA1010-L-AZ | 7 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1011 | 制造商: 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB 制造商:SANYO Semiconductor Co Ltd 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
| 2SA1011D | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-220AB |
| 2SA1011E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-220AB |
| 2SA1011P | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage Switching, AF Power Amp,100W Output Predriver Applications |
| 2SA1012 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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