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參數(shù)資料
| 型號： | 2SA1008-L |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 226K |
| 代理商： | 2SA1008-L |
Data Sheet D14866EJ2V0DS
2
2SA1008
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC =
1.0 A, IB1 = 0.1 A, L = 1 mH
100
V
Collector to emitter voltage
VCEX(SUS)1
IC =
1.0 A, IB1 = IB2 = 0.1 A,
VBE(OFF) = 5.0 V, L = 180
H, clamped
100
V
Collector to emitter voltage
VCEX(SUS)2
IC =
2.0 A, IB1 = 0.2 A, IB2 = 0.1 A,
VBE(OFF) = 5.0 V, L = 180
H, clamped
100
V
Collector cutoff current
ICBO
VCB =
100 V, IE = 0 A
10
A
Collector cutoff current
ICER
VCE =
100 V, RBE = 51 , TA = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE =
100 V, VBE(OFF) = 1.5 V
10
A
Collector cutoff current
ICEX2
VCE =
100 V, VBE(OFF) = 1.5 V,
TA = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB =
5.0 V, IC = 0 A
10
A
DC current gain
hFE1
VCE =
5.0 V, IC = 0.1 ANote
40
DC current gain
hFE2
VCE =
5.0 V, IC = 1.0 ANote
40
200
Collector saturation voltage
VCE(sat)
IC =
1.0 A, IB = 0.1 ANote
0.6
V
Base saturation voltage
VBE(sat)
IC =
1.0 A, IB = 0.1 ANote
1.5
V
Turn-on time
ton
0.5
s
Storage time
tstg
1.5
s
Fall time
tf
IC =
1.0 A, RL = 50 ,
IB1 =
IB2 = 0.1 A, VCC 50 V
Refer to the test circuit.
0.5
s
Note Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
40 to 80
60 to 120
100 to 200
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1008M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SA1009 | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON POWER TRANSISTORS |
| 2SA1009A | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON POWER TRANSISTORS |
| 2SA1009AH | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SA1009AJ | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-220AB |
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