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參數(shù)資料
| 型號(hào)： | 2SA0963Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126A-A1, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 211K |
| 代理商： | 2SA0963Q |
2SA0963
2
SJD00006BED
VBE(sat) IC
hFE IC
fT IE
PC Ta
IC VCE
VCE(sat) IC
Cob VCB
VCER RBE
ICEO Ta
0
12
10
8
6
4
2
0
200
40
80
160
120
Collector
power
dissipation
P
C
(W)
Ambient temperature T
a (°C)
0
10
2
4
8
6
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
TC
= 25°C
IB
= 40 mA
5 mA
10 mA
15 mA
20 mA
25 mA
30 mA
35 mA
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
0.01
0.1
1
10
0.1
1
IC / IB
= 10
TC
= 100°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
0.01
1
0.1
1
10
TC
= 25°C
25
°C
100
°C
IC / IB
= 10
Base-emitter
saturation
voltage
V
BE(sat)
(V)
Collector current I
C (A)
0.01
1
0.1
1
10
100
1 000
VCE
= 5 V
TC
= 100°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
0.01
0.1
1
10
0
240
200
160
120
80
40
VCB
= 5 V
f
= 200 MHz
TC
= 25°C
Transition
frequency
f
T
(MHz)
Emitter current I
E (A)
1
10
100
0
20
40
60
80
100
120
140
IE
= 0
f
= 1 MHz
TC
= 25°C
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
Collector-base voltage V
CB (V)
0
60
50
40
30
20
10
0.001
0.01
0.1
1
10
TC
= 25°C
Base-emitter resistance R
BE (k)
Collector-emitter
voltage
(Resistor
between
B
and
E)
V
CER
(V)
1
1 000
100
10
I CEO
(T
a)
I CEO
(T
a
=
25
°C)
0
120
20
100
40
80
60
VCE
= 12 V
Ambient temperature T
a (°C)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA0963R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SA-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Integrated 2-Axis Hall Sensor |
| 2SA100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Ge PNP Drift |
| 2SA1004 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-40V -.1A .31W EBC |
| 2SA1005-K(A) | 制造商:Renesas Electronics Corporation 功能描述: |
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