參數(shù)資料
型號: 2SA0885Q
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126
中文描述: 1 A, 35 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝: ROHS COMPLIANT, TO-126B-A1, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 63K
代理商: 2SA0885Q
Power Transistors
2
2SA0885
0
6
5
4
3
2
1
0
200
40
80
160
120
180
20
60
140
100
(1)With a 100
×
100
×
2mm
Al heat sink
(2)Without heat sink
(1)
(2)
Ambient temperature T
a
(C)
C
C
0
1.5
1.25
1.0
0.75
0.5
0.25
0
10
2
4
8
6
T
C
=25
C
I
B
=
10mA
1mA
2mA
3mA
4mA
5mA
6mA
9mA
8mA
7mA
Collector to emitter voltage V
CE
(V)
C
C
0
1.2
1.0
0.8
0.6
0.4
0.2
0
12
2
Base current I
B
(mA)
10
4
8
6
V
CE
=
10V
T
C
=25
C
C
C
P
C
T
a
I
C
V
CE
I
C
I
B
0.01
0.03
Collector current I
C
(A)
0.01
0.03
0.1
0.3
1
3
10
0.1
0.3
1
I
C
/I
B
=10
T
C
=100
C
25
C
25
C
C
C
0.01
0.01
0.03
Collector current I
C
(A)
0.1
0.3
1
0.03
1
3
0.1
10
0.3
I
C
/I
B
=10
T
C
=
25
C
25
C
100
C
B
B
0.01
0.1
1
0.03
Collector current I
C
(A)
0.3
1
1000
100
10
3
300
30
V
CE
=
10V
T
C
=100
C
25
C
25
C
F
F
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
1
3
10
30
100
0
40
80
120
200
160
20
60
100
180
140
V
CB
=
10V
f=200MHz
T
C
=25
C
Emitter current I
E
(mA)
T
T
1
Collector to base voltage V
CB
(V)
3
10
30
100
0
50
40
30
20
10
45
35
25
15
5
I
E
=0
f=1MHz
T
C
=25
C
C
o
0.1
0.3
1
3
10
30
100
0
20
40
60
80
100
I
C
=
10mA
T
C
=25
C
Base to emitter resistance R
BE
(k
)
C
C
f
T
I
E
C
ob
V
CB
V
CER
R
BE
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