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參數(shù)資料
| 型號(hào)： | 2SA0794AR |
| 英文描述： | TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 500MA I(C) | TO-126 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 120伏特五（巴西）總裁| 500mA的一（c）|至126 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | 2SA0794AR |
Transistors
1
Publication date: January 2003
SJC00002CED
2SA0719, 2SA0720 (2SA719, 2SA720)
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SC1317, 2SC1318
■ Features
Complementary pair with 2SC1317 and 2SC1318
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SA0719
VCBO
30
V
(Emitter open)
2SA0720
60
Collector-emitter voltage 2SA0719
VCEO
25
V
(Base open)
2SA0720
50
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
500
mA
Peak collector current
ICP
1A
Collector power dissipation
PC
625
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SA0719
VCBO
IC
= 10 A, I
E
= 0
30
V
(Emitter open)
2SA0720
60
Collector-emitter voltage
2SA0719
VCEO
IC = 10 mA, IB = 0
25
V
(Base open)
2SA0720
50
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
A
Forward current transfer ratio
hFE1 *
VCE
= 10 V, I
C
= 150 mA
85
340
hFE2
VCE = 10 V, IC = 500 mA
40
Collector-emitter saturation voltage
VCE(sat)
IC = 300 mA, IB = 30 mA
0.35 0.60
V
Base-emitter saturation voltage
VBE(sat)
IC
= 300 mA, I
B
= 30 mA
1.1
1.5
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
6
15
pF
(Common base, input open circuited)
Note) The part numbers in the parenthesis show conventional part number.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA0794Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 500MA I(C) | TO-126 |
| 2SA0794R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 500MA I(C) | TO-126 |
| 2SA0838 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
| 2SA0838(2SA838) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SA0838 (2SA838) - PNP Transistor |
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