參數(shù)資料
型號(hào): 2PD602AS/T4
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝: PLASTIC, SC-59, 3 PIN
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 100K
代理商: 2PD602AS/T4
1999 Apr 23
3
NXP Semiconductors
Product data sheet
NPN general purpose transistor
2PD602A
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1.
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 60 V
10
nA
IE = 0; VCB = 60 V; Tj = 150 °C
5
μA
IEBO
emitter cut-off current
IC = 0; VEB = 4 V
10
nA
hFE
DC current gain
IC = 150 mA; VCE = 10 V; note 1
2PD602AQ
85
170
2PD602AR
120
240
2PD602AS
170
340
DC current gain
IC = 500 mA; VCE = 10 V; note 1
40
VCEsat
collector-emitter saturation
voltage
IC = 300 mA; IB = 30 mA; note 1
600
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
15
pF
fT
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz; note 1
2PD602AQ
140
MHz
2PD602AR
160
MHz
2PD602AS
180
MHz
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