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參數(shù)資料
| 型號： | 2PD601AR |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Paper Capacitor; Voltage Rating:1500VDC; Capacitor Dielectric Material:Paper; Capacitance:12uF; Capacitance Tolerance: 10%; Lead Pitch:20.64mm; Leaded Process Compatible:No; Package/Case:D; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SC-59A, TO-236, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2PD601AR |
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN general purpose transistor
2PD601A
FEATURES
Low current (max. 100 mA)
Low voltage (max. 50 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in an SC-59 plastic package.
PNP complement: 2PB709A.
MARKING
TYPE NUMBER
MARKING CODE
2PD601AQ
2PD601AR
2PD601AS
ZQ
ZR
ZS
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 Simplified outline (SC-59) and symbol.
handbook, halfpage
1
2
1
3
2
3
MAM321
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
60
50
6
100
200
100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C
T
amb
≤
25
°
C; note 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2PD601AS | Paper Capacitor; Voltage Rating:1500VDC; Capacitor Dielectric Material:Paper; Capacitance:15uF; Capacitance Tolerance:+/- 10%; Lead Pitch:20.64mm; Leaded Process Compatible:No; Package/Case:D; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| 2PD601 | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-236VAR |
| 2PD602 | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | SOT-23VAR |
| 2PD602A | NPN general purpose transistor(NPN通用型晶體管) |
| 2PD602AQ | NPN general purpose transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2PD601AR T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2PD601AR,115 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2PD601AR115 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| 2PD601ARL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:50 V, 100 mA NPN general-purpose transistors |
| 2PD601ARL,215 | 功能描述:兩極晶體管 - BJT 50V 100MA NPN GEN-PURPOSE TRAN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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