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參數(shù)資料
| 型號： | 2PC4617SM,315 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 1 MM X 0.60 MM, 0.50 MM HEIGHT, PLASTIC, SC-101, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 45K |
| 代理商： | 2PC4617SM,315 |
2003 Jul 15
2
Philips Semiconductors
Product specication
NPN general purpose transistors
2PC4617M series
FEATURES
Leadless ultra small plastic package
(1 mm
× 0.6 mm × 0.5 mm)
Board space 1.3 × 0.9 mm
Power dissipation comparable to SOT23.
APPLICATIONS
General purpose small signal DC applications
Low and medium frequency AC applications
Mobile communications, digital (still) cameras, PDAs,
PCMCIA cards.
DESCRIPTION
NPN general purpose transistor in a SOT883 leadless
ultra small plastic package.
PNP complement: 2PA1776M series.
MARKING
TYPE NUMBER
MARKING CODE
2PC4617QM
D7
2PC4617RM
D8
2PC4617SM
D9
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
MAM475
1
2
3
2
1
3
Bottom view
Fig.1 Simplified outline (SOT883) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
50
V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
m copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
note 1
250
mW
note 2
430
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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