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參數(shù)資料
| 型號： | 2N930A |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 封裝： | HERMETIC SEALED, METAL, TO-18, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 17K |
| 代理商： | 2N930A |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)CEO*
Collector – Emitter Breakdown Voltage
V(BR)CBO
Collector – Base Breakdown Voltage
V(BR)EBO
Emitter – Base Breakdown Voltage
ICEO
Collector Cut-off Current
ICBO
Collector – Cut-off Current
ICES
Collector – Cut-off Current
IEBO
Emitter – Cut-off Current
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
hib
Input Impedance
hrb
Voltage Feedback Ratio
hob
Output Admittance
hfe
Small Signal Current Gain
NF
Noise Figure
V
nA
A
nA
V
—
MHz
pF
x10-6
mho
—
dB
45
60
6
2
0.5
0.7
0.9
60
100
300
30
600
30
6
25
32
600
1
150
600
3
2N930A
IC = 10mA
IB = 0
IC = 10AIE = 0
IE = 10AIC = 0
VCE = 5V
IB = 0
VCB = 45V
IE = 0
VCE = 45V
VBE = 0
TA =170°C
VEB = 5V
IC = 0
IC = 10mA
IB = 0.5mA
IC = 10mA
IB = 0.5mA
IC = 1.0AVCE = 5V
IC = 10AVCE = 5V
TA = - 55°C
IC = 10mA
VCE = 5V
IC = 500AVCE = 5V
f = 30MHz
IE = 0
VCB = 5V
f = 1MHz
IE = 1mA
VCB = 5V
f = 1kHz
VCE = 5V
IC = 10A
RS = 10k
f = 1.0kHz
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
* Pulse Test: tp ≤ 300s, δ≤ 2%
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 5470
Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N930B | 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N930CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 2N930JANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
| 2N930MOT8711 | 制造商:Motorola 功能描述:2N930 |
| 2N930UB | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 45V 0.03A 3PIN UB - Gel-pak, waffle pack, wafer, diced wafer on film |
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