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參數(shù)資料
| 型號(hào)： | 2N7369 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 80 V, PNP, Si, POWER TRANSISTOR, TO-254AA |
| 封裝： | TO-254, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 27K |
| 代理商： | 2N7369 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: A
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2
2N7369 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 3.0 Adc, VCE = 2.0 Vdc
hFE
50
30
175
140
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
VCE(sat)
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
VBE(sat)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz
h
fe
4.0
20
Output Capacitance
VCB =10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
500
pF
SAFE OPERATING AREA
DC Tests
TC = +25
0C, 1 Cycle, t
≥ 1.0 s
Test 1
VCE = 11.5 Vdc, IC = 10 Adc
Test 2
VCE = 45 Vdc, IC = 2.5 Adc
Test 3
VCE = 60 Vdc, IC = 0.9 Adc
(2) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
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| 2N7369 | 80 V, PNP, Si, POWER TRANSISTOR, TO-254AA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7369JAN | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP HIGH POWER SILICON TRANSISTOR |
| 2N7369JANTX | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP HIGH POWER SILICON TRANSISTOR |
| 2N7369JANTXV | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP HIGH POWER SILICON TRANSISTOR |
| 2N736A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-18 |
| 2N736B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-18 |
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