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參數(shù)資料
| 型號(hào)： | 2N7261 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | MODIFIED TO-39, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 284K |
| 代理商： | 2N7261 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/601
T4-LDS-0119 Rev. 2 (101017)
Page 2 of 5
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 12V, ID = 8.0A
VDS = 50V
Qg(on)
Qgs
Qgd
50
10
20
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 8.0A, VGS = 12Vdc,
Gate drive impedance = 7.5
Ω,
VDD = 50Vdc
td(on)
tr
td(off)
tf
25
32
40
ns
Diode Reverse Recovery Time
di/dt ≤ 100A/s, VDD ≤ 30V,
IF = 8.0A
trr
270
ns
POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3) (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
100
Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 1.0mA MSR
VDS ≥ VGS, ID = 1.0mA MSF
VGS(th)1
2.0
1.25
4.0
4.5
Vdc
Gate Current
VGS = ±20V, VDS = 0V
IGSS1
±100
nAdc
Drain Current
VGS = 0V, VDS = 80V MSR
VGS = 0V, VDS = 80V MSF
IDSS1
25
50
Adc
Static Drain-Source On-State Voltage
VGS = 12V, ID = 5.0A pulsed MSR
VGS = 12V, ID = 5.0A pulsed MSF
VDS(on)
0.9
1.2
Vdc
Diode Forward Voltage
VGS = 0V, ID = 8.0A pulsed
VSD
1.5
Vdc
NOTE:
(3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in
accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias (80V)
conditions.
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