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參數(shù)資料
| 型號(hào)： | 2N7224 |
| 英文描述： | N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N溝道功率MOS場效應(yīng)管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) |
| 中文描述： | N溝道功率MOSFET（減振鋼板基本：100V的，身份證（續(xù)）：34A條的Rds（on）：0.070Ω）（不適用馬鞍山溝道功率場效應(yīng)管（減振鋼板基本：100V的，身份證（續(xù)）：34A條的Rds（on） ：0.070Ω）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | 2N7224 |
2N7224
IRFM150
LA B
MECHANICAL DATA
Dimensions in mm (inches)
S E M E
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
2/99
V
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink (Typical)
Thermal Resistance Junction-to-Ambient
(V
GS
= 10V , T
case
= 25°C)
(V
GS
= 10V , T
case
= 100°C)
E
AS
dv/dt
T
J
, T
stg
R
q
JC
R
q
JCS
R
q
JCA
±20V
34A
21A
136A
150W
1.2W/°C
150mJ
5.5V/ns
–55 to 150°C
0.83°C/W
0.21°C/W
48°C/W
1
2
3
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
3
3
1
1
1
1
2
2
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
TO–254AA – Package
Notes
1) Pulse Test: Pulse Width
￡
300
m
s,
d ￡
2%
2) @ V
DD
= 25V , L
3
200
m
H , R
G
= 25
W
, Peak I
L
= 34A , Starting T
J
= 25°C
3) @ I
SD
￡
34A , di/dt
￡
70A/
m
s , V
DD
￡
BV
DSS
, T
J
￡
150°C , SUGGESTED R
G
= 2.35
W
N–CHANNEL
POWER MOSFET
FEATURES
REPETITIVE AVALANCHE RATING
ISOLATED AND HERMETICALLY SEALED
ALTERNATIVE TO TO-3 PACKAGE
SIMPLE DRIVE REQUIREMENTS
EASE OF PARALLELING
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
V
DSS
I
D(cont)
R
DS(on)
100V
34A
0.070
W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7227 | 400V, 14A, N-Channel, Enhancement Mode Power MOSFET(400V, 14A,N溝道，增強(qiáng)模式功率MOS場效應(yīng)管) |
| 2N7228 | 500V, 12A, N-Channel, Enhancement Mode Power MOSFET(500V, 12A,N溝道，增強(qiáng)模式功率MOS場效應(yīng)管) |
| 2N7224 | 100V, 34A, N-Channel, Enhancement Mode Power MOSFET(100V, 34A,N溝道，增強(qiáng)模式功率MOS場效應(yīng)管) |
| 2N7225 | 200V, 27.4A, N-Channel, Enhancement Mode Power MOSFET(200V, 27.4A,N溝道，增強(qiáng)模式功率MOS場效應(yīng)管) |
| 2N7227 | JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N72241N6036 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 |
| 2N72241N6036A | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 |
| 2N72241N6036AE3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 |
| 2N72241N6036E3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 |
| 2N72241N6072 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 |
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