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參數(shù)資料
| 型號(hào)： | 2N70L-TA3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 700 V, 6.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 252K |
| 代理商： | 2N70L-TA3-T |
2N70
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-334.C
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
30
ns
Turn-On Rise Time
tR
80
ns
Turn-Off Delay Time
tD(OFF)
50
ns
Turn-Off Fall Time
tF
VDD =350V, ID =2.0A, RG=25
(Note 1, 2)
70
ns
Total Gate Charge
QG
8.1
11
nC
Gate-Source Charge
QGS
1.7
nC
Gate-Drain Charge
QGD
VDS=560V, VGS=10V, ID=2.0A
(Note 1, 2)
4.4
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
1.4
V
Continuous Drain-Source Current
ISD
2.0
A
Pulsed Drain-Source Current
ISM
8.0
A
Reverse Recovery Time
tRR
260
ns
Reverse Recovery Charge
QRR
VGS = 0 V, ISD = 2.0A
di/dt = 100 A/μs (Note1)
1.09
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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