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參數(shù)資料
| 型號(hào)： | 2N7091-QR-B |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | 14 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB |
| 封裝： | HERMETIC SEALED, METAL, TO-220, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 16K |
| 代理商： | 2N7091-QR-B |
Parameter
Min.
Typ.
Max.
Unit
RthJC
Thermal resistance Junction-Case
1.8
RthJA
Thermal resistance Junction-ambient
80
°C/W
RthCS
Thermal resistance Case to Sink
1.0
2N7091
Document Number 2653
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0
ID = -250A
VDS = VGS
ID = -250A
VDS = 0
VGS = ±20V
VDS = -80V
VGS = 0
TJ = 125°C
VDS = -10V
VGS = -10V
ID = - 8.7A
TJ = 125°C
VDS = -15V
IDS = -8.7A
VGS = 0
VDS = - 25V
f = 1MHz
VDS = -50
VGS = -10V
ID = -14A
VDD = -50V
ID = -14A
VGEN =-10V
RL = 3.5
RG = 4.7
IF = -14A
VGS = 0
IF = -14A
di/dt = 100A/s
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
THERMAL RESISTANCECHARACTERISTICS
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate – Body Leakage
Zero Gate Voltage Drain Current
On–State Drain Current1
Drain – Source On–State
Resistance 1
Forward Transconductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate Source Charge2
Gate Drain Charge2
Turn–On Delay Time2
Rise Time2
Turn–Off Delay Time2
Fall Time2
Continuous Current
Pulsed Current
Diode Forward Voltage1
Reverse Recovery Time
Reverse Recovery Charge
-100
-2
-4
±100
-25
-250
-14
0.15
0.20
2.3
0.32
5.0
1300
750
310
50
62
10
15
27
35
10
30
50
80
40
80
40
60
-14
-56
-3.5
150
300
0.3
V
nA
A
S
pF
nC
ns
A
V
ns
C
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
1 Pulse test : Pulse Width < 300
s ,Duty Cycle < 2%
2 Independent of Operating Temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7091R1 | 14 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB |
| 2N7091-QR-BR1 | 14 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB |
| 2N709 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N70G-TN3-R | 2 A, 700 V, 6.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 2N70L-TA3-T | 2 A, 700 V, 6.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7092 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-257AB |
| 2N709A | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| 2N70G-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2 Amps, 700 Volts N-CHANNEL POWER MOSFET |
| 2N70G-TF1-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2 Amps, 700 Volts N-CHANNEL POWER MOSFET |
| 2N70G-TF3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2 Amps, 700 Volts N-CHANNEL POWER MOSFET |
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