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參數(shù)資料
| 型號(hào)： | 2N7086-QR-BR1 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | 14 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 14K |
| 代理商： | 2N7086-QR-BR1 |
Parameter
Min.
Typ.
Max.
Unit
RthJC
Thermal resistance Junction-Case
2.1
RthJA
Thermal resistance Junction-ambient
80
K/W
RthCS
Thermal resistance Junction-ambient
1.0
2N7086
Prelim. 1/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0
ID = 250A
VDS = VGS
ID = 250A
VDS = 0
VGS = ±20V
VDS = 160V
VGS = 0
TJ = 125°C
VDS = 10V
VGS = 10V
ID = 8.5A
TJ = 125°C
VDS = 15V
IDS = 8.5A
VGS = 0
VDS = 25V
f = 1MHz
VDS = 0.5 x V(BR)DSS
VGS = 10V
ID = 14A
VDD = 100V
ID = 14A
VGEN =10V
RL = 7.1
RG = 4.7
IF = IS
VGS = 0
IF = IS
dIF/dt = 100A/s
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
THERMAL RESISTANCECHARACTERISTICS
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate – Body Leakage
Zero Gate Voltage Drain Current
On–State Drain Current1
Static Drain – Source On–State
Resistance 1
Forward Transconductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate Source Charge2
Gate Drain Charge2
Turn–On Delay Time2
Rise Time2
Turn–Off Delay Time2
Fall Time2
Continuous Current
Pulse Current 3
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
200
24
±100
25
250
14
0.14
0.16
0.25
0.30
5.0
1550
500
220
30
44
77
4.6
10
15
13
26
35
10
30
60
100
30
80
40
95
114
56
2.0
150
650
0.5
V
nA
A
S
pF
nC
ns
A
V
ns
C
BV(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
1Pulse test : Pulse Width < 300
s ,Duty Cycle < 2%
2Independent of Operating Temperature
3Pulse width Limited by maximum Junction Temperature
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