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參數(shù)資料
| 型號(hào)： | 2N7085R1 |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 20 A, 100 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 16K |
| 代理商： | 2N7085R1 |
Parameter
Min.
Typ.
Max.
Unit
RthJC
Thermal resistance Junction-Case
2.1
RthJA
Thermal resistance Junction-ambient
80
°C/W
RthCS
Thermal resistance Case to Sink
1.0
2N7085
Prelim. 7/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0
ID = 250A
VDS = VGS
ID = 250A
VDS = 0
VGS = ±20V
VDS = 80V
VGS = 0
TJ = 125°C
VDS = 10V
VGS = 10V
ID = 12A
TJ = 125°C
VDS = 15V
IDS = 12A
VGS = 0
VDS = 25V
f = 1MHz
VDS = 0.5 x V(BR)DSS50V
VGS = 10V
ID = 20A
VDD = 50V
ID = 20A
VGEN =10V
RL = 2.5W
RG = 4.7W
IF = 20A
VGS = 0
IF = 20A
di/dt = 100A/s
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
THERMAL RESISTANCECHARACTERISTICS
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate – Body Leakage
Zero Gate Voltage Drain Current
On–State Drain Current1
Drain – Source On–State
Resistance 1
Forward Transconductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate Source Charge2
Gate Drain Charge2
Turn–On Delay Time2
Rise Time2
Turn–Off Delay Time2
Fall Time2
Continuous Current
Pulsed Current
Diode Forward Voltage1
Reverse Recovery Time
Reverse Recovery Charge
100
24
±100
25
250
20
0.06
0.075
0.11
0.14
5.0
8.0
1400
480
110
35
50
10
20
18
25
13
30
85
120
35
80
75
95
20
80
2.5
150
400
0.5
V
nA
A
W
S
pF
nC
ns
A
V
ns
C
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
1 Pulse test : Pulse Width < 300
ms ,Duty Cycle < 2%
2 Independent of Operating Temperature
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