參數(shù)資料
型號: 2N7002M
廠商: 江蘇長電科技股份有限公司
英文描述: MOSFET( N-Channel )
中文描述: MOSFET的(N溝道)
文件頁數(shù): 2/4頁
文件大?。?/td> 258K
代理商: 2N7002M
ELECTRICAL CHARACTERISTICS(Ta=25
Parameter
unless otherwise specified)
Symbol
Test conditions
V
GS
=0V,I
D
=10μA
V
(BR)DSS
V
GS
=0V,I
D
=3mA
V
th(GS)
V
DS
=V
GS
, I
D
=250μA
l
GSS
V
DS
=0V, V
GS
=±25V
V
DS
=60V, V
GS
=0V
I
DSS
V
DS
=60V,V
GS
=0V,T
j
=125
I
D(ON)
V
GS
=10V, V
DS
=7V
V
GS
=10V, I
D
=500mA
R
DS(0n)
V
GS
=5V, I
D
=50mA
V
GS
=10V, I
D
=500mA
V
DS(0n)
V
GS
=5V, I
D
=50mA
g
ts
V
DS
=10V, I
D
=200mA
V
SD
I
S
=115mA, V
GS
=0V
C
iss
C
OSS
C
rSS
MIN
60
60
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
Gate-Threshold Voltage*
Gate-body Leakage
1
2.5
±100
1
500
7.5
7.5
3.75
0.375
1.2
50
25
5
V
nA
Zero Gate Voltage Drain Current
μA
On-state Drain Current*
500
80
mA
1.2
1.7
Drain-Source On-Resistance*
Drain-Source On- Voltage *
V
Forward Tran conductance*
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
*
Pulse test , pulse width
300μs, duty cycle
2% .
SWITCHING TIME
ms
V
V
DS
=25V, V
GS
=0V,f=1MHz
pF
Turn-on Time
t
d(0n)
20
Turn-off Time
t
d(off)
V
DD
=25V,R
G
=25
Ω
I
D
=500mA,V
GEN
=10V
R
L
=50
Ω
40
ns
相關(guān)PDF資料
PDF描述
2N7002T-7-F N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002T N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002VA-7-L DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002V-7-L DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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