參數(shù)資料
型號(hào)： 2N7002LT1
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 小信號(hào)晶體管
英文描述： Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
中文描述： 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝： CASE 318-08, TO-236, 3 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 58K
代理商： 2N7002LT1
2N7002L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(V
GS
= 0, I
D
= 10 Adc)
V
(BR)DSS
60
Vdc
Zero Gate Voltage Drain Current
(V
GS
= 0, V
DS
= 60 Vdc)
T
= 25
°
C
T
J
= 125
°
C
I
DSS
1.0
500
Adc
GateBody Leakage Current, Forward
(V
GS
= 20 Vdc)
I
GSSF
100
nAdc
GateBody Leakage Current, Reverse
(V
GS
= 20 Vdc)
I
GSSR
100
nAdc
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
V
GS(th)
1.0
2.5
Vdc
OnState Drain Current
(V
DS
≥
2.0 V
DS(on)
, V
GS
= 10 Vdc)
I
D(on)
500
mA
Static DrainSource OnState Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
V
DS(on)
3.75
0.375
Vdc
Static DrainSource OnState Resistance
(V
GS
= 10 V, I
D
= 500 mAdc)
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= 25
°
C
T
C
= 125
°
C
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
r
DS(on)
7.5
13.5
7.5
13.5
Ohms
Forward Transconductance
(V
DS
≥
2.0 V
DS(on)
, I
D
= 200 mAdc)
g
FS
80
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
50
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
25
pF
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
5.0
pF
SWITCHING CHARACTERISTICS
(Note 5)
TurnOn Delay Time
(V
= 25 Vdc, I
R
G
= 25 , R
L
= 50 , V
gen
= 10 V)
500 mAdc,
t
d(on)
20
ns
TurnOff Delay Time
t
d(off)
40
ns
BODYDRAIN DIODE RATINGS
Diode Forward OnVoltage
(I
S
= 11.5 mAdc, V
GS
= 0 V)
V
SD
1.5
Vdc
Source Current Continuous
(Body Diode)
I
S
115
mAdc
Source Current Pulsed
I
SM
800
mAdc
5. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7002LT1/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 115 mA， 60 Volts
2N7002LT1G 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002LT1G 制造商:ON Semiconductor 功能描述:MOSFET Transistor Transistor Polarity:Si
2N7002LT1H 制造商:ON Semiconductor 功能描述:SMALL SIGNAL MOSFET 60 V
2N7002LT3 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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