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參數(shù)資料
| 型號： | 2N7002L-T1 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | TO-236, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 58K |
| 代理商： | 2N7002L-T1 |
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-3
SPECIFICATIONS2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000
2N7002
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
Switchingd
Turn-On Time
tON
VDD = 15 V, RL = 25 W
7
10
Turn-Off Time
tOFF
VDD = 15 V, RL = 25 W
ID ^0.5 A, VGEN = 10 V, RG = 25 W
7
10
Turn-On Time
tON
VDD = 30 V, RL = 150 W
7
20
ns
Turn-Off Time
tOFF
VDD = 30 V, RL = 150 W
ID ^ 0.2 A, VGEN = 10 V, RG = 25 W
11
20
SPECIFICATIONSVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VQ1000J/P
BS170
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 100 mA
70
60
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 1 mA
2.1
0.8
2.5
0.8
3
V
VDS = 0 V, VGS = "10 V
"100
Gate-Body Leakage
IGSS
TJ = 125_C
"500
nA
GSS
VDS = 0 V, VGS = "15 V
"10
VDS = 25 V, VGS = 0 V
0.5
Zero Gate Voltage Drain Current
IDSS
VDS = 48 V, VGS = 0 V, TJ = 125_C
500
mA
DSS
VDS = 60 V, VGS = 0 V
10
m
On-State Drain Currentb
ID(on)
VDS = 10 V, VGS = 10 V
1
0.5
A
VGS = 5 V, ID = 0.2 A
4
7.5
VGS = 10 V, ID = 0.2 A
2.3
5
W
Drain-Source On-Resistanceb
rDS(on)
VGS = 10 V, ID = 0.3 A
2.3
5.5
W
TJ = 125_C
4.2
7.6
VDS = 10 V, ID = 0.2 A
100
Forward Transconductanceb
gfs
VDS = 10 V, ID = 0.5 A
100
mS
Common Source Output Conductanceb
gos
VDS =5 V, ID = 0.05 A
0.5
Dynamic
Input Capacitance
Ciss
22
60
Output Capacitance
Coss
VDS =25 V, VGS = 0 V
f = 1 MHz
11
25
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
2
5
Switchingd
Turn-On Time
tON
VDD = 15 V, RL = 23 W
7
10
Turn-Off Time
tOFF
VDD = 15 V, RL = 23 W
ID ^ 0.6 A, VGEN = 10 V, RG = 25 W
7
10
Turn-On Time
tON
VDD = 25 V, RL = 125 W
7
10
ns
Turn-Off Time
tOFF
VDD = 25 V, RL = 125 W
ID ^ 0.2 A, VGEN = 10 V, RG = 25 W
7
10
Notes
a.
For DESIGN AID ONLY, not subject to production testing.
VNBF06
b.
Pulse test: PW
v80 ms duty cycle v1%.
c.
This parameter not registered with JEDEC.
d.
Switching time is essentially independent of operating temperature.
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| 2N7002LT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 115 mA， 60 Volts |
| 2N7002LT1G | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002LT1G | 制造商:ON Semiconductor 功能描述:MOSFET Transistor Transistor Polarity:Si |
| 2N7002LT1H | 制造商:ON Semiconductor 功能描述:SMALL SIGNAL MOSFET 60 V |
| 2N7002LT3 | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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