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參數(shù)資料
| 型號(hào)： | 2N7002KTB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 111K |
| 代理商： | 2N7002KTB |
PAGE . 1
August 11.2010-REV.01
2N7002KTB
FEATURES
R
DS(ON), VGS@10V,IDS@500mA=3Ω
R
DS(ON), VGS@4.5V,IDS@200mA=4Ω
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
ESD Protected 2KV HBM
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: SOT-523 Package
Terminals : Solderable per MIL-STD-750,Method 2026
Marking : 27
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Maximum RATINGS and Thermal Characteristics (T
A=25
OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PA R A M E TE R
S ym bol
Li m i t
U ni t s
D r ai n- S o ur ce Vo lt age
V
DS
60
V
G a t e - S our c e Vo lt age
V
GS
+ 20
V
C o nti nuo us D r a i n C ur r e nt
I
D
11 5
m A
P uls ed D r ai n C ur r ent 1)
I
DM
800
m A
Ma xi mum P o w e r D i s s i p a t i o n
T
A =2 5
O C
T
A =7 5
O C
P
D
200
15 0
mW
O per at i ng Junc t i on and S t or age Te m per a tur e
Ra ng e
T
J ,T STG
- 5 5 t o + 150
O C
Junction-to Ambient Thermal Resistance(PCB mounted)2
R
θJA
883
O C/ W
SOT-523
0.009(0.23)
0.013(0.33)
0.043(1.10)
0.052(1.30)
0.059(1.50)
0.067(1.70)
0.035(0.90)
0.044(1.10)
0.067(1.70)
0.059(1.50)
0.019(0.50)
0.024(0.60)
0.002(0.07)
0.007(0.17)
0.004(0.10)
0.012(0.30)
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| 2N7002TRLEADFREE | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002KTB6 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002K-TP | 功能描述:MOSFET 350mW, 60V, 340mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002KU | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:N Channel MOSFET |
| 2N7002KW | 功能描述:MOSFET NCHAN Enhance MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002KW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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