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參數(shù)資料
| 型號： | 2N7002KFN3 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, DFN-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 130K |
| 代理商： | 2N7002KFN3 |
PAGE . 1
September 03.2010-REV.00
2N7002KFN3
FEATURES
R
DS(ON), VGS@10V,IDS@500mA=3Ω
R
DS(ON), VGS@4.5V,IDS@200mA=4Ω
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
ESD Protected 2KV HBM
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: DFN 3L Package
Terminals : Solderable per MIL-STD-750,Method 2026
Marking : AU
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Maximum RATINGS and Thermal Characteristics (T
A=25
OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PA R A M E TE R
S ym bol
Li m i t
U ni t s
D r ai n- S o ur ce Vo lt age
V
DS
60
V
G a t e - S our c e Vo lt age
V
GS
+ 20
V
C o nti nuo us D r a i n C ur r e nt
I
D
11 5
m A
P uls ed D r ai n C ur r ent 1)
I
DM
800
m A
Ma xi mum P o w e r D i s s i p a t i o n
T
A =2 5
O C
T
A =7 5
O C
P
D
200
15 0
mW
O per at i ng Junc t i on and S t or age Te m per a tur e
Ra ng e
T
J ,T STG
- 5 5 t o + 150
O C
Junction-to Ambient Thermal Resistance(PCB mounted)2
R
θJA
883
O C/ W
0.042(1.05)
0.037(0.95)
0.013(0.32)
0.008(0.22)
0.014(0.36)
0.013(0.32)
0.008(0.22)
0.002(0.05) MAX.
0.026(0.65)
0.021(0.55)
0.0
(0.55)
0.047(0.45)
22
0.0
(0.55)
0.047(0.45)
22
0.0
(0.20)
0.004(0.10)
08
0.0
(0.20)
14
0.0
(0.20)
0.004(0.10)
08
DFN 3L
Unit : inch(mm)
1
2
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002KG | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:N-Ch Small Signal MOSFET with Gate Protection |
| 2N7002KG-AE2-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N7002KL-AE2-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N7002KL-TR1 | 功能描述:MOSFET 60V 0.47A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002KL-TR1-E3 | 功能描述:MOSFET 60V 0.47A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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