參數(shù)資料
型號(hào): 2N7002KDWT/R7
元件分類: 小信號(hào)晶體管
英文描述: 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ROHS COMPLIANT PACKAGE-6
文件頁數(shù): 2/5頁
文件大?。?/td> 113K
代理商: 2N7002KDWT/R7
PAGE . 2
May 21.2010-REV.01
2N7002KDW
ELECTRICALCHARACTERISTICS
VDD
VOUT
VIN
RG
RL
Switching
Test Circuit
Gate Charge
Test Circuit
VDD
VGS
RG
RL
1mA
P a r a m e t e r
S ym bo l
Tes t C o nd i t i o n
M i n.
Typ .
M ax.
Uni t s
St a t ic
D r ai n- S o ur c e B r ea k d own
Vo l t age
BV
DS S
V
GS =0 V , ID = 10u A
6 0
-
V
G a t e Thr e sho ld Vo lt age
V
GS ( t h)
V
DS =V GS , ID = 250u A
1
-
2 . 5
V
D r a i n- S o ur c e On- S t a t e
Re si sta nce
R
DS ( o n)
V
GS=4.5V, I D=200mA
-
4 . 0
Ω
D r a i n- S o ur c e On- S t a t e
Re si sta nce
R
DS ( o n)
V
GS=10V, I D=500mA
-
3.0
Ze r o Ga t e Vo lt ag e D r a i n
Cur r e nt
I
DS S
V
DS=60V, VGS=0V
--1
uA
Gate Body Leakage
I
GS S
V
GS =+ 20 V , V DS =0 V
-
+ 10
uA
Forward Transconductance
g
fS
V
DS = 15V , ID =2 5 0 mA
1 0 0
-
m S
Dynamic
To ta l Ga te C ha r g e
Q
g
V
DS = 15V , ID =2 0 0 mA
V
GS=4.5V
--
0 . 8
nC
Turn-On D e la y Ti m e
t
on
V
DD=30V , RL=150Ω
I
D=200mA , VGEN=10V
R
G=10Ω
--
20
ns
Turn-Of f D e l a y Ti me
t
off
--
4 0
Inp ut C a p a c i ta nc e
C
is s
V
DS =2 5 V , V GS =0 V
f = 1. 0M H
Z
--
3 5
pF
O utp ut C a p a c i ta nc e
C
os s
--
10
Re ve r s e Tr ansf er
C apaci t anc e
C
rs s
--
5
S o ur c e -D ra i n D i o d e
D i ode F o r war d Vo lt age
V
SD
I
S = 2 00m A , V GS = 0 V
-
0. 82
1. 3
V
C o nti nuo us D i o d e F o r wa r d
Cur r e nt
I
s
--
-
11 5
m A
P uls ed D i ode F o r war d
Cur r e nt
I
sM
--
-
800
m A
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