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參數(shù)資料
| 型號： | 2N7002E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 99K |
| 代理商： | 2N7002E |
2N7002E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain
to
Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
60
V
Drain
to
Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
75
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25
°
C
1
A
T
J
= 125
°
C
500
Gate
to
Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
20 V
±
100
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.0
2.5
V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4.4
mV/
°
C
Drain
to
Source On Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 240 mA
0.86
2.5
V
GS
= 4.5 V, I
D
= 50 mA
1.1
3.0
Forward Transconductance
g
FS
V
DS
= 5 V, I
D
= 200 mA
80
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz,
V
DS
= 25 V
26.7
pF
Output Capacitance
C
OSS
4.6
Reverse Transfer Capacitance
C
RSS
2.9
Total Gate Charge
Q
G(TOT)
V
GS
= 5 V, V
DS
= 10 V;
I
D
= 240 mA
0.81
nC
Threshold Gate Charge
Q
G(TH)
0.31
Gate
to
Source Charge
Q
GS
0.48
Gate
to
Drain Charge
Q
GD
0.08
SWITCHING CHARACTERISTICS, V
GS
= V
(Note 3)
Turn
On Delay Time
t
d(ON)
V
GS
= 10 V, V
DD
= 30 V,
I
D
= 200 mA, R
G
= 10
1.7
ns
Rise Time
t
r
1.2
Turn
Off Delay Time
t
d(OFF)
4.8
Fall Time
t
f
3.6
DRAIN
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 200 mA
T
J
= 25
°
C
0.79
1.2
V
T
J
= 85
°
C
0.7
2. Pulse Test: pulse width
≤
300 s, duty cycle
≤
2%
3. Switching characteristics are independent of operating junction temperatures
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參數(shù)描述 |
|---|---|
| 2N7002E,215 | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002E_10 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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| 2N7002E215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 385MA 3-SOT-23 |
| 2N7002-E3 | 功能描述:MOSFET 60V 0.115A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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