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參數(shù)資料
| 型號： | 2N6978 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 5A, 400V and 500V N-Channel IGBTs |
| 中文描述： | 5 A, 500 V, N-CHANNEL IGBT, TO-204AA |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | 2N6978 |
3-2
Specifications 2N6975, 2N6976, 2N6977, 2N6978
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
2N6975/2N6977
2N6976/2N6978
MIN
MAX
MIN
MAX
Collector-Emitter
Breakdown Voltage
BV
CES
l
C
= 1 mA, V
GE
= 0
400
(Note 1)
-
500
(Note 1)
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2
(Note 1)
4.5
(Note 1)
2
(Note 1)
4.5
(Note 1)
V
Zero Gate Voltage Collector
Current
l
CES
V
CE
= 400V
-
250
(Note 1)
-
-
μ
A
V
CE
= 500V
-
-
-
250
(Note 1)
μ
A
T
C
= +125
o
C
-
-
-
-
μ
A
V
CE
= 400V
-
1000
(Note 1)
-
-
μ
A
V
CE
= 500V
-
-
-
1000
(Note 1)
μ
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V, V
CE
= 0V
-
100
(Note 1)
-
100
(Note 1)
ns
Reverse Collector-Emitter
Leakage Current
I
ECS
R
GE
= 0
, V
EC
= 5V
-
5
(Note 1)
-
5
(Note 1)
mA
Collector-Emitter On Voltage
V
CE(ON)
I
C
= 5A, V
GE
= 10V
-
2
(Note 1)
-
2
(Note 1)
V
I
C
= 10A, V
GE
= 20V
-
2.5
-
2.5
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 5A, V
CE
= 10V
3.4
(Note 1)
6.8
(Note 1)
3.4
(Note 1)
6.8
(Note 1)
V
On-State Gate Charge
Q
G(ON)
I
C
= 5A, V
CE
= 10V
12
(Note 1)
25
(Note 1)
12
(Note 1)
25
(Note 1)
nC
Turn-On Delay Time
t
D(ON)
I
C
= 5A
V
CE(CLP)
= 300V
L = 50
μ
H
T
J
= +125
o
C
V
GE
= 10V
R
G
= 50
50 Max
ns
Rise Time
t
R
50 Max
ns
Turn-Off Delay Time
t
D(ON)
400 Max
(Note 1)
ns
Fall Time
t
FI
2N6975
2N6976
1000 Max
(Note 1)
ns
2N6977
2N6978
500 Max
(Note 1)
ns
Turn-Off
Energy Loss per Cycle
(Off Switching Dissipation=
W
OFF
x Frequency)
W
OFF
I
C
= 5A
V
CE(CLP)
= 300V
L = 50
μ
H
T
J
= +125
o
C
V
GE
= 10V
R
G
= 50
2N6975
2N6976
1000 Max
(Note 1)
μ
J
2N6977
2N6978
500 Max
(Note 1)
μ
J
Thermal Resistance
Junction-to-Case
R
θ
JC
1.25
(Note 1)
o
C/W
NOTE:
1. JEDEC registered value.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N697A | 功能描述:兩極晶體管 - BJT NPN Med Pwr RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N697S | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 3PIN TO-5 - Bulk |
| 2N698 | 制造商:Powerex Power Semiconductors 功能描述: |
| 2N6985 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 16A I(C) | RFMOD |
| 2N6986 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 16A I(C) | RFMOD |
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