參數(shù)資料
型號: 2N6977
廠商: HARRIS SEMICONDUCTOR
元件分類: IGBT 晶體管
英文描述: 5A, 400V and 500V N-Channel IGBTs
中文描述: 5 A, 400 V, N-CHANNEL IGBT, TO-204AA
文件頁數(shù): 3/4頁
文件大?。?/td> 40K
代理商: 2N6977
3-3
2N6975, 2N6976, 2N6977, 2N6978
Typical Performance Curves
FIGURE 1. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE
AS A FUNCTION OF JUNCTION TEMPERATURE FOR
ALL TYPES
FIGURE 2. NORMALIZED THERMAL RESPONSE
CHARACTERISTICS FOR ALL TYPES
FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS FOR ALL
TYPES
FIGURE 4. TYPICAL SATURATION CHARACTERISTICS FOR
ALL TYPES
FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT FOR
ALL TYPES
FIGURE 6. CAPACITANCE AS A FUNCTION OF COLLECTOR-
TO-EMITTER VOLTAGE FOR ALL TYPES
T
C
, JUNCTION TEMPERATURE (
o
C)
N
V
GE
= V
CE
I
C
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
+50
+100
+150
V
t, TIME (ms)
10
1.0
0.1
0.01
0.01
0.1
1.0
10
100
1000
Z
θ
JC
(t) = r(t)R
θ
JC
D CURVES APPLY FOR POWER PULSE
TRAIN SHOWN READ TIME AT t1
T
J(PEAK)
- T
C
= P
(PEAK)
Z
θ
JC
(t)
SINGLE PULSE
D = 0.05
D = 0.2
D = 0.5
E
I
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
,
10
7.5
5.0
2.5
0
0
2.5
7.5
5.0
10
PULSE TEST, V
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
+25
o
C
+125
o
C
-40
o
C
T
C
= +25
o
C
V
GE
= +6V
V
GE
= +5V
V
GE
= +4V
V
GE
= +10V
V
GE
= +8V
V
GE
= +7V
10
7.5
5.0
2.5
0
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
,
PULSE TEST
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GE
= 10V
I
C
,
V
CE
, COLLECTOR-TO-EMITTER ON VOLTAGE (V)
10
8
6
4
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
1200
1000
800
600
400
200
0
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
C
f = 0.1MHz
CRSS
CISS
COSS
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