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參數(shù)資料
| 型號(hào)： | 2N696 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 27K |
| 代理商： | 2N696 |
6 Lake Street, Lawrence, MA 01841
7/99 REV: E
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
Value
Units
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Total Power Dissipation @ TA = 25
0C (1)
@ TC = 25
0C (2)
PT
0.6
2.0
W
Operating & Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
0.075
0C/mW
1) Derate linearly 4.0 mW/
0C for TA > 250C
2) Derate linearly 13.3 mW/
0C for TC > 250C
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(3)
RBE = 10 , IC = 100 mAdc
V(BR)CER
40
Vdc
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 30 Vdc
ICBO
10
0.1
Adc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
10
Adc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 150 mAdc, VCE = 10 Vdc
2N696
2N697
hFE
20
40
60
120
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
VCE(sat)
0.3
1.5
Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
VBE(sat)
1.3
Vdc
(3) Pulse Test: Pulse Width 250 to 350
s, Duty Cycle ≤ 2.0%.
TECHNICAL DATA
2N696
2N697
Processed per MIL-PRF-19500/99
NPN MEDIUM-POWER SILICON TRANSISTORS
MIL-PRF
QML
DEVICES
TO-5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6962 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-210AC |
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| 2N6966 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-213AA |
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