- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371470 > 2N6845 (International Rectifier) POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) PDF資料下載
參數(shù)資料
| 型號： | 2N6845 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) |
| 中文描述： | 功率MOSFET P溝道（BVdss \u003d- 100V的，的Rds（on）\u003d 0.60ohm，身份證\u003d- 4.0a上） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 232K |
| 代理商： | 2N6845 |
Thermal Resistance
Parameter
Junction-to-Case
Min. Typ. Max. Units
—
—
6.25
Test Conditions
RthJC
RthJA
Junction-to-Ambient
—
—
175
K/W
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
Test Conditions
-4.0
-16
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-4.8
200
3.1
V
ns
μ
C
T
j
= 25°C, IS = -4.0A, VGS = 0V
Tj = 25°C, IF = -4.0A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
-100
—
Typ. Max. Units
—
—
-0.10
—
Test Conditions
VGS = 0V, ID = -1.0 mA
Reference to 25°C, ID = -1.0 mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
1.25
—
—
—
—
—
—
—
—
0.60
0.69
-4.0
—
-25
-250
VGS = -10V, ID = -2.6A
VGS = -10V, ID = -4.0A
VDS = VGS, ID = -250
μ
A
VDS > -15V, IDS = -2.6A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -10V, ID = -4.0A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = -50V, ID = -4.0A,
RG = 7.5
,
VGS = -10V
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
4.3
1.3
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
-100
100
16.3
4.7
9.0
60
100
50
70
—
see figure 10
Modified MOSFET
symbol showing the
internal inductances.
LS
Internal Source Inductance
—
15
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
380
170
45
—
—
—
VGS = 0V, VDS = -25V
f = 1.0 MHz
see figure 5
JANTX2N6845, JANTXV2N6845 Device
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
nA
A
Next Data Sheet
Index
Previous Datasheet
To Order
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6975 | 5A, 400V and 500V N-Channel IGBTs |
| 2N6976 | 5A, 400V and 500V N-Channel IGBTs |
| 2N6977 | 5A, 400V and 500V N-Channel IGBTs |
| 2N6978 | 5A, 400V and 500V N-Channel IGBTs |
| 2N697 | NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6845 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-39 |
| 2N6845JANTX | 制造商:International Rectifier 功能描述: |
| 2N6845JANTXV | 制造商:Int'L Rectifier 功能描述:Trans MOSFET P-CH 100V 4A 3-Pin TO-39 |
| 2N6845LCC4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:P–CHANNEL POWER MOSFET |
| 2N6845UJANTX | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 3.5A 18-Pin LLCC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。