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參數(shù)資料
| 型號： | 2N6836 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 393K |
| 代理商： | 2N6836 |
2N6836
3–2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage (Table 2)
(IC = 100 mA, IB = 0)
VCEO(sus)
450*
—
—
Vdc
Collector Cutoff Current
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
—
—
0.25*
1.5*
mAdc
Collector Cutoff Current
(VCE = 850 Vdc, RBE = 50 , TC = 100_C)
ICER
—
—
2.5
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
—
—
1.0*
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 15*
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 16
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.7 Adc)
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 10 Adc, IB = 1.0 Adc, TC = 100_C)
VCE(sat)
—
—
1.2
2.5*
3.0*
Vdc
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 10 Adc, IB = 1.0 Adc, TC = 100_C)
VBE(sat)
—
—
1.5*
1.5
Vdc
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE
8.0*
5.0
—
30*
—
—
DYNAMIC CHARACTERISTICS (2)
Current Gain — Bandwidth Product
(VCE = 10 Vdc, IC = 0.25 Adc, ftest = 10 MHz)
fT
10*
—
75*
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Cob
50*
—
400*
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.0 Adc,
PW = 30
s,
Duty Cycle
v 2.0%)
(IB2 = 2.6 Adc,
RB2 = 1.6 )
td
—
20
100*
ns
Rise Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.0 Adc,
PW = 30
s,
Duty Cycle
v 2.0%)
(IB2 = 2.6 Adc,
RB2 = 1.6 )
tr
—
200
500*
Storage Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.0 Adc,
PW = 30
s,
Duty Cycle
v 2.0%)
(IB2 = 2.6 Adc,
RB2 = 1.6 )
ts
—
1200
3000*
Fall Time
IB1 = 1.0 Adc,
PW = 30
s,
Duty Cycle
v 2.0%)
tf
—
200
250*
Storage Time
Duty Cycle
v 2.0%)
(VBE(off) = 5.0 Vdc)
ts
—
650
—
Fall Time
v 2.0%)
(VBE(off) = 5.0 Vdc)
tf
—
80
—
Inductive Load (Table 2)
Storage Time
(IC = 10 Adc,
IB1 = 1.0 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 100_C)
tsv
—
800
1500*
ns
Fall Time
(IC = 10 Adc,
IB1 = 1.0 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 100_C)
tfi
—
50
150*
Crossover Time
(IC = 10 Adc,
IB1 = 1.0 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
_C)
tc
—
90
200*
Storage Time
IB1 = 1.0 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 150_C)
tsv
—
1050
—
Fall Time
VCE(pk) = 400 Vdc)
(TC = 150_C)
tfi
—
70
—
Crossover Time
_C)
tc
—
120
—
(1) Pulse Test: PW
± 300 s, Duty Cycle v 2%.
(2) fT = |she| ftest.
* Indicates JEDEC Registered Limit.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6837 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 450V 20A 3PIN TO-3 - Bulk |
| 2N6838 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30MA I(C) | SOT-173 |
| 2N6839 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50MA I(C) | SOT-173 |
| 2N683A | 制造商:UPI 功能描述:Silicon Controlled Rectifier, 100 Volt, 18A, TO-208AA |
| 2N683-LT | 制造商:n/a 功能描述:SCR |
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