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參數(shù)資料
| 型號(hào)： | 2N6800 |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 400 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205 |
| 封裝： | HERMETIC SEALED, TO-205, 3 PIN |
| 文件頁數(shù)： | 5/5頁 |
| 文件大小： | 64K |
| 代理商： | 2N6800 |
Parameter
Min.
Typ.
Max.
Units
Test Conditions
BV
DSS
Drain-Source
500
V
GS = 0
V, I
D =1.0 mA,
Breakdown Voltage
R
DS(on)
Static Drain-to-Source
-
--
-
1.5
V
GS = 1
0 V, I
D = 1.5 A
3
On-State Resistance
-
--
-
1.6
V
GS = 1
0 V, I
D = 2.5 A
3
V
GS(th)
Gate Threshold Voltage
2.0
-
4.0
V
DS
= V
GS,
I
D = 250 A
I
DSS
Zero Gate Voltage Drain
-
--
-
25
A
V
DS = 400 V, VGS = 0V
Current
-
--
-
250
V
DS = 400 V, VGS = 0V, TJ = 125°C
I
GSS
Gate -to-Source Leakage Forward
-
--
-
100
nA
V
GS = 20 V
I
GSS
Gate -to-Source Leakage Reverse
-
--
-
-100
nA
V
GS = -20 V
Q
G(on)
On-state Gate Charge
-
--
-
29.5
nC
V
GS = 1
0 V, I
D = 2.5 A
Q
GS
Gate-to-Source Charge
-
--
-
4.5
nC
V
DS = 250 V
Q
Gd
Gate-to-Drain (“Miller”) Charge
-
--
-
28.1
nC
See note 4
t
D(on)
Turn-On Delay Time
-
--
-
-30
ns
V
DD = 225 V, ID = 1.5 A, RG = 7.5
t
r
Rise Time
-
--
-
30
ns
See note 4
t
D(off)
Turn-Off Delay Time
-
--
-
-55
ns
t
r
Fall Time
-
--
-
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Test Conditions
V
SD
Diode Forward Voltage
-
--
-
1.4
V
T
J
= 25°C, I
S
= 2.5 A
3,VGS = 0 V
t
r
Reverse Recovery Time
-
--
-
900
ns
T
J = 25°C, IF= 2.5 A,d
i/dt<100A/s
3
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Test Conditions
R
thJC
Junction-to-Case
-
--
-
5.0
Mounting surface flat,
R
thCS
Case-to-sink
-
0.21
-
°C/W
smooth, and greased
R
thJA
Junction-to-Ambient
-
--
-
175
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
@V
DD= 50 V, Starting TJ = 25°C, L = 100 uH + 10%, RG = 25
, Peak I
L = 2.5 A
3. Pulse width < 300 s; Duty Cycle < 2%
4. See MIL-S-19500/557
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N6802
Units
I
D @
V
GS = 10V, TC = 25°C
Continuous Drain Current
2.5
A
I
D @
V
GS = 10V, TC = 100°C
Continuous Drain Current
1.5
A
I
DM
Pulsed Drain Current
1
11
A
P
D @
T
C = 25°C
Maximum Power Dissipation
25
W
Linear Derating Factor
0.20
W/°C
V
GS
Gate-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
2
.35
4
mJ
TJ
Operating Junction
-55 to 150
°C
TSTG
Storage Temperature Range
Lead Temperature
300 (.06 from case for 10 sec)
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise noted
2N6796, JANTX2N6796 JANTXV2N6796
2N6800, JANTX2N6800, JANTXV2N6800
2N6798, JANTX2N6798 JANTXV2N6798
2N6802, JANTX2N6802, JANTXV2N6802
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6796 | 8 A, 100 V, 0.195 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205 |
| 2N6802TX | 3.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6802TX | 3.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6802 | 2.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6804 | 11 A, 100 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6800_01 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N–CHANNEL ENHANCE-MENT POWER MOSFET |
| 2N6800JANTX | 制造商:International Rectifier 功能描述: |
| 2N6800LCC4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N–CHANNEL ENHANCEMENT MODE |
| 2N6800U | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| 2N6800UJANTXV | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 3A 18-Pin LLCC |
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