參數(shù)資料
型號(hào): 2N6798
廠商: SEMELAB LTD
元件分類: JFETs
英文描述: N-CHANNEL ENHANCEMENT MODE TRANSISTOR
中文描述: 5.5 A, 200 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
封裝: HERMETIC SEALED, METAL, TO-39, 3 PIN
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 21K
代理商: 2N6798
Parameter
Drain–Source Breakdown Voltage
Gate Thresshold Voltage
Gate–Body Leakage
On-State Drain Current
1
Test Conditions
V
GS
= 0
V
DS
=V
GS
V
DS
= 0
V
DS
= 2.2
V
DS
=0.8 x V
(BR)DSS
V
GS
= 0
V
GS
= 10V
V
DS
= 5V
Min.
200
2.0
Typ.
Max.
Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
D(on)
I
DSS
Zero Gate Voltage Drain Current
r
DS(on)
gfs
C
iss
C
oss
C
rss
t
don
t
r
t
d(of)
t
f
Drain–Source On–Resistance
1
Forward Transconductance
1
Input Capacitance
Output capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
RiseTime
Turn off Delay Time
FallTime
SOURCE DRAIN DIODE RATING CHARACTERISTICS
V
SD
I
S
I
SM
t
rr
Q
rr
Diode Forward Voltage
1
Continues Current
Pulsed Current
2
Reverse Recovery Time
Reverse Recovered Charge
I
D
= 1000
m
A
I
D
= 250
m
A
V
GS
= ±20V
V
GS
= 10V
Tj = 125
°
C
I
D
= 3.5A
I
D
= 3.5A
V
DS
= 25V
V
GS
= 0
f = 1.0MH
Z
V
DD
= 77V
I
D
= 3.5A
RL = 22
W
V
GEN
= 10V
R
G
= 7.5 ohms
I
F
= I
S
V
GS
= 0
I
F
= I
S
dI
F
/DT = 100A/
m
S
4.0
100
5.5
25
250
0.25
3.0
600
250
80
8
42
12
30
4.0
2.5
30
50
50
40
1.4
5.5
22
500
6
150
V
nA
A
m
A
W
s(
é
)
pF
ns
V
A
ns
m
C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 6/99
2N6798
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
1)
2)
Pulse test : Pulse Width < 300
m
s ,Duty Cycle < 2%
Pulse width limited by maximum juction temperature
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