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參數(shù)資料
| 型號(hào)： | 2N6796 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 100 V, 0.195 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | FORMELY TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 177K |
| 代理商： | 2N6796 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
T4-LDS-0047 Rev. 2 (101281)
Page 1 of 4
DEVICES
LEVELS
2N6796
2N6796U
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
100
Vdc
Gate – Source Voltage
VGS
± 20
Vdc
Continuous Drain Current
TC = +25°C
ID1
8.0
Adc
Continuous Drain Current
TC = +100°C
ID2
5.0
Adc
Max. Power Dissipation
Ptl
25 (1)
W
Drain to Source On State Resistance
Rds(on)
1.8 (2)
Ω
Operating & Storage Temperature
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 5.0A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
100
Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 80V
VGS = 0V, VDS = 80V, Tj = +125°C
IDSS1
IDSS2
25
0.25
Adc
mAdc
Static Drain-Source On-State Resistance
VGS = 10V, ID = 5.0A pulsed
VGS = 10V, ID = 8.0A pulsed
Tj = +125°C
VGS = 10V, ID = 5.0A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0.18
0.195
0.35
Ω
Diode Forward Voltage
VGS = 0V, ID = 8.0A pulsed
VSD
1.5
Vdc
TO-205AF
(formerly TO-39)
U – 18 LCC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6796 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39 |
| 2N6796_03 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:TMOS FET ENHANCEMENT N - CHANNEL |
| 2N6796_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6796JANTX | 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: |
| 2N6796JANTXV | 制造商:International Rectifier 功能描述: |
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