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參數(shù)資料
| 型號(hào)： | 2N6796 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | 2N6796 |
2001 Fairchild Semiconductor Corporation
2N6796 Rev. B
Typical Performance Curves Unless Otherwise Specied
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
TC, CASE TEMPERATURE (
oC)
PO
WER
DISSIP
A
TION
MUL
TIPLIER
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
50
100
I D
,DRAIN
CURRENT
(A)
TC, CASE TEMPERATURE (
oC)
150
25
75
125
10
8
6
4
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
JC
,NORMALIZED
THERMAL
IMPED
ANCE
10-3
10-2
1.0
10-5
10-4
0.01
0.1
10
10-1
1
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
t1
t2
SINGLE PULSE
0.1
0.02
0.2
0.5
0.01
0.05
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
I D
,DRAIN
CURRENT
(A)
100
1
10
-1
-0.1
1000
10
s
100
s
1ms
10ms
100ms
DC
SINGLE PULSE
TJ = MAX RATED
TC = 25
oC
OPERATION IN THIS AREA IS
LIMITED BY rDS(ON)
I D
,DRAIN
CURRENT
(A)
010
20
30
40
5
10
15
20
25
50
10V
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
0
8V
7V
6V
5V
4V
30
35
9V
2N6796
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2N6796 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39 |
| 2N6796_03 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:TMOS FET ENHANCEMENT N - CHANNEL |
| 2N6796_10 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6796JANTX | 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: |
| 2N6796JANTXV | 制造商:International Rectifier 功能描述: |
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