參數(shù)資料
型號: 2N6796
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
中文描述: 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 1/2頁
文件大?。?/td> 18K
代理商: 2N6796
Prelim. 11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
2N6796
TMOS FET TRANSISTOR
N – CHANNEL
FEATURES
V
DSS
= 100V
I
D
= 8A
R
DSON
= 0.18
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
Drain–Source Voltage
Drain–Gate Voltage (R
GS
= 1.0m
)
Gate–Source Voltage
Drain Current Continuous
Drain Current Pulsed
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
R
θ
JC
Thermal Resistance Junction to Case
R
θ
JC
Thermal Resistance Junction to Ambient
T
L
Maximum Lead Temperature 1.5mm from Case for
10 s
T
J
, T
STG
100V
100V
±20V
8.0A
32A
25W
0.2W/ °CW
–55 to +150°C
5.0°CW
175°CW
300°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
PIN 1 – Source
Underside View
PIN 2 – Gate
PIN 3 – Drain Case
( 00 . 8 9
1 2 . 7 0
( 0 . 5 0 0 )
m i n .
6 . 1 0 ( 0 . 2 4 0 )
6 . 6 0 ( 0 . 2 6 0 )
8 . 8 9 ( 0 . 3 5 )
9 . 4 0 ( 0 . 3 7 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
d i a .
0 . 6 6 ( 0 . 0 2 6 )
1 . 1 4 ( 0 . 0 4 5 )
0 . 7 1 ( 0 . 0 2 8 )
0 . 8 6 ( 0 . 0 3 4 )
2 . 5 4
( 0 . 1 0 0 )
5 . 0 8 ( 0 . 2 0 0 )
t y p .
4 5 °
1
2
3
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