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參數(shù)資料
| 型號： | 2N6790 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.5A, 200V, 0.800 Ohm, N-Channel Power |
| 中文描述： | 3.5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 86K |
| 代理商： | 2N6790 |
2001 Fairchild Semiconductor Corporation
2N6790 Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
2N6790
200
200
3.5
2.25
14
±20
3.5
14
20
0.16
-55 to 150
UNITS
V
V
A
A
A
V
A
A
W
W/
o
C
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
GS
= 20k
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
T
C
= 100
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulse Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Above T
C
= 25
C, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DS
DGR
D
D
o
DM
GS
S
SM
D
o
o
C
J
, T
STG
L
pkg
300
260
o
o
C
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
V
= 0.25mA, V
GS
= 1.0mA
= 0V
200
-
-
V
Gate to Threshold Voltage
V
GS(TH)
I
DSS
GS
= V
DS
, I
D
2
-
4
V
Zero-Gate Voltage Drain Current
V
DS
= 200V, V
GS
= 0V
-
-
250
μ
A
V
DS
= 160V, V
GS
= 0V
T
C
= 125
o
C
-
-
1000
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= 3.5A, V
=
±
20V, V
DS
= 10V
= 0
-
-
100
nA
Drain to Source On-Voltage (Note 2)
V
DS(ON)
I
D
I
D
I
D
I
S
I
D
V
f = 1MHz
GS
-
-
2.8
V
Drain to Source On Resistance
r
DS(ON)
= 2.25A, V
GS
= 10V
-
.5
0.800
= 2.25A, V
GS
= 10V
T
C
= 125
o
C
-
-
1.5
Diode Forward Voltage
V
SD
g
fs
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
= 3.5A, V
GS
= 0V
0.7
-
1.5
V
Forward Transconductance (Note 2)
= 2.25A, V
DS
= 5V
1.5
2.25
4.5
S
Input Capacitance
GS
= 0V, V
DS
= 25V
200
450
600
pF
Output Capacitance
60
150
300
pF
Reverse-Transfer Capacitance
15
40
80
pF
Turn-On Delay Time
I
V
D
GS
= 2.25A
74V, R
G
= 50
-
-
40
ns
Rise Time
-
-
50
ns
Turn-Off Delay Time
-
-
50
ns
Fall Time
f
-
-
50
ns
Safe Operating Area
SOA
V
DS
= 160V, I
D
= 125mA
20
-
-
W
V
DS
= 5.7V, I
D
= 3.5A
20
-
-
W
Thermal Resistance Junction to Case
R
θ
JC
-
-
6.25
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
Free Air Operation
-
-
175
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Reverse Recovery Time
t
rr
T
J
= 150
o
C, I
o
C, I
SD
= 3.5A, dl
SD
/dt = 100A/μs
350
-
ns
Reverse Recovered Charge
Q
RR
TJ = 150
SD
= 3.5A, dl
SD
/dt = 100A/μs
2.3
-
μC
NOTES:
2. Pulse test: pulse width
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
≤
300
μ
s, duty cycle
≤
2%.
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| 2N6790TXV | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| 2N6792 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 2A 3PIN TO-39 - Bulk 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 400V, 2A TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| 2N6792JANTX | 制造商:International Rectifier 功能描述: |
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